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| NTE389 Silicon NPN Transistor Horizontal Output Description: The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits. Features: D Collector-Emitter Voltage: VCEX = 1500V D Glass Passivated Base-Collector Junction D Forward Bias Safe Operating Area @ 50s = 20A, 300V D Switching Times with Inductive Loads: tf = 0.5s (Typ) @ IC = 3A Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750V Collector-Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Continouos Emitter Current, IE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Total Power Dissipation, PD TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25C/W Maximum Lead Temperature (For Soldering, 1/8" from Case for 5sec), TL . . . . . . . . . . . . . . +275C Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics (Note 1) Collector-Emitter Sustaining Voltage VCEO(sus) IC = 50mA, IB = 0 Collector Cutoff Current Emitter Cutoff Current ON Characteristics (Note 1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Dynamic Characteristics Current Gain - Bandwidth Product Output Capacitance Switching Characteristics Fall Time tf IC = 3A, IB1 = 1.2A, LB = 8H - 0.5 1.0 s fT Cob IC = 0.1A, VCE = 5V, ftest = 1MHz VCB = 10V, IE = 0, f = 0.1MHz - - 4 90 - - MHz pF VCE(sat) VBE(sat) IC = 3A, IB = 1.2A IC = 3A, IB = 1.2A - - - - 5.0 1.5 V V ICES IEBO VCE = 1500V, VBE = 0 VBE = 5V, IC = 0 750 - - - - - - 1.0 1.0 V mA mA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s, Duty Cycle = 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
Price & Availability of NTE389
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